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Model No. LD-808-200N Features
Applications
Absolute
maximum ratings
Electrical and optical characteristics
(Tc=25oC
|
Parameter |
Symbol |
Min. |
Typ. |
Max. |
Unit |
Conditions |
Peak
wavelength |
l |
805 |
808 |
811 |
nm |
|
Threshold
current |
Ith |
- |
55 |
75 |
mA |
|
Operating
current |
Iop |
- |
260 |
280 |
mA |
|
Operating
voltage |
Vop |
- |
1.7 |
1.9 |
V |
|
Differential
efficiency |
h |
0.8 |
1.0 |
- |
mW/mA |
|
Parallel
divergence angle |
q// |
- |
9 |
15 |
deg |
|
Perpendicular
divergence angle |
q^ |
- |
41 |
48 |
deg |
|
Emission
point accuracy |
DxDyDz |
- |
- |
±80 |
um |
Precautions
Do not operate the device above the maximum rating condition, even momentarily. It may cause unexpected permanent damage to the device.
Semiconductor laser device is very sensitive to
electrostatic discharge. High
voltage spike current may change the characteristics of the device, or
malfunction at any time during its service period.
Therefore, proper measures for preventing electrostatic discharge are
strongly recommended.
Effective heat sink can help the device operates under
a more relax condition; as a result, a more stable characteristics and better
reliability can be achieved. So it
is recommended that always apply proper heat sink before the device is
operating.
Do not look into the laser beam directly by bare eyes.
The laser beam may cause severe damage to human eyes
Pin Connection & Mechanical Outline (unit: mm)
Pinout |
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Bottom view |
Note: The above specifications are subject to change without notice.
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