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Parameter
|
Symbol |
Condition |
Rating |
Unit |
Light output power |
|
CW |
500 |
mW |
Reverse voltage (LD) |
VRL |
- |
2 |
V |
Reverse voltage (PD) |
VRD |
- |
30 |
V |
Forward current (PD) |
IFD |
- |
10 |
mA |
Case temperature |
TC |
- |
-10~+50 |
oC |
Storage temperature |
TS |
- |
-40~+85 |
oC |
Electrical and optical characteristics
(Tc=25 oC)
Parameter |
Symbol |
Min. |
Typ. |
Max. |
Unit |
Conditions |
Peak
wavelength |
l |
805 |
808 |
811 |
nm |
|
Threshold
current |
Ith |
- |
150 |
200 |
mA |
|
Operating
current |
Iop |
- |
600 |
700 |
mA |
|
Operating
voltage |
Vop |
- |
1.8 |
2.0 |
V |
|
Differential
efficiency |
h |
0.8 |
1.0 |
- |
mW/mA |
|
Monitor
current |
Im |
0.15 |
0.8 |
3 |
mA |
|
Parallel
divergence angle |
q// |
- |
10 |
15 |
deg |
|
Perpendicular
divergence angle |
q^ |
- |
44 |
48 |
deg |
|
Emission
point accuracy |
DxDyDz |
- |
- |
±80 |
um |
Do not operate the device above the maximum rating
condition, even momentarily. It
may cause unexpected permanent damage to the device.
Semiconductor laser device is very sensitive to
electrostatic discharge. High
voltage spike current may change the characteristics of the device, or
malfunction at any time during its service period. Therefore, proper measures for preventing electrostatic discharge
are strongly recommended.
Effective heat sink can help the device operates under
a more relax condition; as a result, a more stable characteristics and
better reliability can be achieved. So
it is recommended that always apply proper heat sink before the device is
operating.
Do not look into the laser beam directly by bare eyes. The laser beam may cause severe damage to human eyes.
The above specifications are subject to change without
notice.
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